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Applied Physics Letters

Volumn 86, Issue 10, 2005, Pages 1-3

Enhanced boron activation in silicon by high ramp-up rate solid phase epitaxial regrowth

(6) Pawlak, B J a Vandervorst, W b,c Smith, A J d Cowern, N E B d Colombeau, B d Pages, X e

a PHILIPS RESEARCH LABORATORIES (Netherlands)

b IMEC (Belgium)

c UNIVERSITY OF LEUVEN (Belgium)

d UNIVERSITY OF SURREY (United Kingdom)

e ASM International NV (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BORON; CHEMICAL ACTIVATION; CMOS INTEGRATED CIRCUITS; SECONDARY ION MASS SPECTROMETRY; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

BORON ACTIVATION; BORON-INTERSTITIAL CLUSTERS (BIC); ISOCHRONAL POST-ANNEALING; SOLID PHASE EPITAXIAL REGROWTH (SPER);

EPITAXIAL GROWTH;

EID: 17944373637 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1882756 Document Type: Article

Times cited : (37)

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