Theory of thermal Si oxide growth rate taking into account interfacial Si emission effects

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 301-309

  Kageshima, H ^a   Uematsu, M ^a   Shiraishi, K ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Growth rate; Initial enhanced oxidation; Interstitials; Oxidation; Silicon; Theory

Indexed keywords

INTERFACES (MATERIALS); RATE CONSTANTS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMOOXIDATION;

EMISSION EFFECTS;

SILICA;

EID: 0035498502     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00614-1     Document Type: Conference Paper

References (27)