Preamorphization implantation-assisted boron activation in bulk germanium and germanium-on-insulator

Applied Physics Letters

Volumn 87, Issue 14, 2005, Pages 1-3

  Chao, Y L ^a   Prussin, S ^a   Woo, J C S ^a   Scholz, R ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYERS; DYNAMIC ANNEALING; PREAMORPHIZATION;

ALUMINUM; COMPRESSIVE STRENGTH; CRYSTALLIZATION; EPITAXIAL GROWTH; GALLIUM COMPOUNDS; GERMANIUM; TRANSMISSION ELECTRON MICROSCOPY;

MORPHOLOGY;

EID: 28344455642     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2076440     Document Type: Article

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