(110) and (100) Sidewall-oriented FinFETs: A performance and reliability investigation

Solid-State Electronics

Volumn 78, Issue , 2012, Pages 2-10

  Young, C D ^a   Akarvardar, K ^a,b   Baykan, M O ^a,c   Matthews, K ^a   Ok, I ^a   Ngai, T ^a   Ang, K W ^a   Pater, J ^a   Smith, C E ^a   Hussain, M M ^a   Majhi, P ^a,d   Hobbs, C ^a  

^a SEMATECH   (United States)

^b GLOBALFOUNDRIES Assignee to SEMATECH ^*  (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

FinFET; HCI; Mobility; NBTI; Orientation dependence; Sidewall

Indexed keywords

DRAIN VOLTAGE; FINFET; FINFETS; GATE LENGTH; GATE VOLTAGES; HOT CARRIER INJECTION; INTERFACE TRAP DENSITY; MOSFET MOBILITY; NBTI; NEGATIVE BIAS; NEGATIVE BIAS TEMPERATURE INSTABILITY; ORIENTATION DEPENDENCE; PLANAR DEVICES; RELIABILITY INVESTIGATIONS; SHORT-CHANNEL PERFORMANCE; SIDEWALL; SILICON-ON-INSULATORS; SUBSTRATE ORIENTATION; SURFACE ORIENTATION;

CARRIER MOBILITY; DEGRADATION; ELECTRON MOBILITY; GATE DIELECTRICS; HAFNIUM; HUMAN COMPUTER INTERACTION; IMPACT IONIZATION; MOSFET DEVICES;

INTEGRATED CIRCUITS;

EID: 84866127349     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.05.045     Document Type: Conference Paper

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