Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation

Solid-State Electronics

Volumn 62, Issue 1, 2011, Pages 146-151

  Rodrigues, M ^a   Galeti, M ^a   Martino, J A ^a   Collaert, N ^b   Simoen, E ^b   Claeys, C ^b,c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Analog operation; Crystal orientation; HfSiO nitridation; SOI Multiple Gate FET (MuGFET); TiN

Indexed keywords

ANALOG OPERATION; ANALOG PERFORMANCE; EARLY VOLTAGE; HFSIO NITRIDATION; HIGH-K MATERIALS; POST-NITRIDATION; SOI MULTIPLE GATE FET (MUGFET); TIN METAL GATE; VOLTAGE GAIN;

DEGRADATION; GAIN MEASUREMENT; GATE DIELECTRICS; GATES (TRANSISTOR); NITRIDATION; TITANIUM NITRIDE;

CRYSTAL ORIENTATION;

EID: 79957949607     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.002     Document Type: Article

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