Comparison of different surface orientation in narrow fin MuGFETs

Microelectronic Engineering

Volumn 86, Issue 12, 2009, Pages 2381-2384

  Lee, Chi Woo ^a   Afzalian, Aryan ^a   Ferain, Isabelle ^a   Yan, Ran ^a   Dehdashti, Nima ^a   Byun, Ki Yeol ^a   Colinge, Cynthia ^a   Xiong, Weize ^b   Colinge, Jean Pierre ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Breakdown voltage; Mobility; MuGFETs; Surface orientation

Indexed keywords

ACCUMULATION MODES; BREAKDOWN VOLTAGE; DENSITY OF INTERFACE STATE; DEVICE PERFORMANCE; DEVICE STABILITY; DOPING CONCENTRATION; INTERFACE ROUGHNESS; MOBILITY; MUGFETS; P-TYPE; PERFORMANCE OF DEVICES; PMOS DEVICES; SHORT-CHANNEL EFFECT; SURFACE ORIENTATION;

ELECTRIC BREAKDOWN; FINS (HEAT EXCHANGE);

FIELD EFFECT TRANSISTORS;

EID: 70349758331     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.04.025     Document Type: Article

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