A low-field mobility model for bulk, ultrathin body SOI and double-gate n-MOSFETs with different surface and channel orientations part I: Fundamental principles

IEEE Transactions on Electron Devices

Volumn 57, Issue 7, 2010, Pages 1567-1574

  Silvestri, Luca ^a   Reggiani, Susanna ^a   Gnani, Elena ^a   Gnudi, Antonio ^a   Baccarani, Giorgio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Crystal orientation; mobility model; SOI MOSFETs; ultrathin silicon

Indexed keywords

CHANNEL ORIENTATIONS; DOUBLE-GATE; EFFECTIVE MASS; FLOW DIRECTION; FUNDAMENTAL PRINCIPLES; IN-PLANE; INTERFACE STATE; LOW FIELD MOBILITY; MOBILITY MODEL; MOSFETS; NMOSFETS; REPOPULATION; SCATTERING RATES; SOI-MOSFETS; SUB-BANDS; SURFACE ORIENTATION; SURFACE ROUGHNESS SCATTERING; ULTRATHIN BODY; ULTRATHIN SILICON;

ELECTRON MOBILITY; MODELS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SURFACE ROUGHNESS;

CRYSTAL ORIENTATION;

EID: 77954030868     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2049210     Document Type: Article

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