Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100>- and <110> channel orientations

Thin Solid Films

Volumn 520, Issue 8, 2012, Pages 3332-3336

  Habicht, Stefan ^a   Feste, Sebastian ^a   Zhao, Qing Tai ^a   Buca, Dan ^a   Mantl, Siegfried ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Field effect transistor; Mobility; Nanowire; Silicon on insulator; Strained silicon

Indexed keywords

BIAXIAL TENSILE STRAIN; C-V METHOD; CHANNEL DIRECTIONS; CHANNEL ORIENTATIONS; CRYSTAL DIRECTION; ELECTRICAL CHARACTERIZATION; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOSFETS; NMOSFETS; ON-CURRENTS; P-MOSFETS; P-TYPE; SILICON ON INSULATOR; SILICON-ON-INSULATOR SUBSTRATES; STRAINED CHANNELS; STRAINED SILICON; STRAINED-SI; SUBTHRESHOLD SWING; UNIAXIAL TENSILE STRAIN;

CARRIER MOBILITY; ELECTRIC BREAKDOWN; ELECTRON MOBILITY; MOSFET DEVICES;

NANOWIRES;

EID: 84857039504     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.08.034     Document Type: Conference Paper

References (18)

1. H. Irie, K. Kita, K. Kyuno, and A. Toriumi Tech. Dig. IEDM 2004 225
2. M. Yang, E.P. Gusev, M. Ieong, O. Gluschenkov, D.C. Boyd, K.K. Chan, P.M. Kozlowski, C.P. D'Emic, R.M. Sicina, P.C. Jamison, and A.I. Chou IEEE Electron Device Lett. 24 2003 339
3. S. Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, S. Nakaharai, T. Numata, J. Koga, and K. Uchida Solid-State Electron. 49 2005 684
4. D. Zhang, C. Li, S. Han, X. Liu, T. Tang, W. Jin, and C. Zhou Appl. Phys. Lett. 82 2003 112
5. S. Feste, S. Habicht, Q.T. Zhao, and S. Mantl Proc. European Solid-State Device Research Conference 2009 372
6. O. Gunawan, L. Sekaric, M. Majumdar, M. Rooks, J. Appenzeller, J.W. Sleight, S. Guha, and W. Haensch Nano Lett. 8 2008 1566
7. S. Habicht, S. Feste, Q.T. Zhao, and S. Mantl Proc. European Solid-State Device Research Conference 2010 372
8. R.A. Minamisawa, S. Habicht, D. Buca, R. Carius, S. Trellenkamp, K.K. Bourdelle, and S. Mantl J. Appl. Phys. 108 2010 124908
9. S. Feste, J. Knoch, D. Buca, and S. Mantl Thin Solild Films 517 2008 322
10. M. Chowdhury, and J.G. Fossum IEEE Electron Device Lett. 27 2006 482
11. K. Uchida, R. Zednik, C.-H. Lu, H. Jagannathan, J. McVittie, P.C. McIntyre, and Y. Nishi Tech. Dig. IEDM 2004 229
12. S. Feste, T. Schäpers, D. Buca, Q.T. Zhao, J. Knoch, M. Bouhassoune, A. Schindlmayr, and S. Mantl Appl. Phys. Lett. 95 2009 182101
13. F. Andrieu, C. Dupré, F. Rochette, O. Faynot, L. Tosti, C. Buj, E. Rouchouze, M. Cassé, B. Ghyselen, I. Cayrefourcq, L. Brévard, F. Allain, J.C. Barbé, J. Cluzel, A. Vandooren, S. Denorme, T. Ernst, C. Fenouillet-Béranger, C. Jahan, D. Lafond, H. Dansas, B. Previtali, J.P. Colonna, H. Grampeix, P. Gaud, C. Mazuré, and S. Deleonibus Proc. Symposium on VLSI Technology 2006 134
14. P. Hashemi, L. Gomez, M. Canonico, and J.L. Hoyt Tech. Dig. IEDM 2008 865
15. P. Hashemi, L. Gomez, and J.L. Hoyt IEEE Electron Dev. Lett. 30 2009 401
16. P. Hashemi, J.T. Teherani, and J.L. Hoyt Tech. Dig. IEDM 2010 788
17. K. Tachi, M. Cassé, S. Barraud, C. Dupré, A. Hubert, N. Vulliet, M.E. Faivre, C. Vizioz, C. Carabasse, V. Delaye, J.M. Hartmann, H. Iwai, S. Cristoloveanu, O. Faynot, and T. Ernst Tech. Dig. IEDM 2010 784
18. K. Tachi, M. Casse, D. Jang, C. Dupré, A. Hubert, N. Vulliet, V. Maffini-Alvaro, C. Vizioz, C. Carabasse, V. Delaye, J.M. Hartmann, G. Ghibaudo, H. Iwai, S. Cristoloveanu, O. Faynot, and T. Ernst Tech. Dig. IEDM 2009 133