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Volumn 43, Issue 11, 1996, Pages 1981-1988

Extraction of experimental mobility data for MOS devices

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; CURVE FITTING; ELECTRON TRANSPORT PROPERTIES; LEAST SQUARES APPROXIMATIONS; SEMICONDUCTOR DEVICE MODELS; VOLTAGE MEASUREMENT;

EID: 0030288532     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.543036     Document Type: Article
Times cited : (100)

References (20)
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    • (1990)
    • deGraaff, H.C.1    Klaassen, F.M.2
  • 2
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    • G. M. Yeric A. F. Tasch S. K. Banerjee A universal MOSFET mobility degradation model for circuit simulation IEEE Trans. Computer-Aided Design 9 1123 1991
    • (1991) , vol.9 , pp. 1123
    • Yeric, G.M.1    Tasch, A.F.2    Banerjee, S.K.3
  • 3
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    • C. Yue V. M. Agostinelli G. M. Yeric A. F. Tasch Improved universal MOSFET electron mobility degradation models for circuit simulation IEEE Trans. Computer-Aided Design 12 1542 1993 43 6506 256929
    • (1993) , vol.12 , pp. 1542
    • Yue, C.1    Agostinelli, V.M.2    Yeric, G.M.3    Tasch, A.F.4
  • 4
    • 0027554650 scopus 로고
    • V. M. Agostinelli G. M. Yeric A. F. Tasch Universal MOSFET hole mobility degradation models for circuit simulation IEEE Trans. Computer-Aided Design 12 439 1993 43 5614 215005
    • (1993) , vol.12 , pp. 439
    • Agostinelli, V.M.1    Yeric, G.M.2    Tasch, A.F.3
  • 5
    • 0024105667 scopus 로고
    • C. Lombardi S. Mangini A. Saporito M. Vangi A physically based mobility model for numerical simulation of non planar devices IEEE Trans. Computer-Aided Design 7 1164 1988 43 469 9186
    • (1988) , vol.7 , pp. 1164
    • Lombardi, C.1    Mangini, S.2    Saporito, A.3    Vangi, M.4
  • 6
    • 0016028465 scopus 로고
    • J. T. C. Chen R. S. Muller Carrier mobilities at weakly inverted silicon surfaces J. Appl. Phys. 45 828 1974
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    • Chen, J.T.C.1    Muller, R.S.2
  • 7
    • 85176691040 scopus 로고
    • J. T. Watt J. D. Plummer Universal mobility-field curves for electrons and holes in MOS inversion layers Proc. VLSI Technology Symp. 1987
    • (1987)
    • Watt, J.T.1    Plummer, J.D.2
  • 8
    • 85176684004 scopus 로고
    • McGraw-Hill New York
    • Y. P. Tsividis Operation and Modeling of the MOS Transistor. 1987 McGraw-Hill New York
    • (1987)
    • Tsividis, Y.P.1
  • 9
    • 4243080560 scopus 로고
    • J. Li T.-P. Ma Effect of nonuniform carrier distribution on channel mobility measurements in metal/SiO $_2$ /Si field effect transistors J. Appl. Phys. 61 1664 1987
    • (1987) , vol.61 , pp. 1664
    • Li, J.1    Ma, T.-P.2
  • 10
    • 85176670629 scopus 로고
    • D. S. Jean D. E. Burk MOSFET electron inversion layer mobilities̵A physically based semi-empirical model for a wide temperature range IEEE Trans. Electron Devices 36 1456 1989 16 1332 30959
    • (1989) , vol.36 , pp. 1456
    • Jean, D.S.1    Burk, D.E.2
  • 11
    • 0023292564 scopus 로고
    • T. Nishida C. T. Sah A physically based mobility model for MOSFET numerical simulation IEEE Trans. Electron Devices ED-34 310 1987
    • (1987) , vol.ED-34 , pp. 310
    • Nishida, T.1    Sah, C.T.2
  • 12
    • 0026171426 scopus 로고
    • H. Shin G. M. Yeric A. F. Tasch C. M. Maziar Physically-based models for effective mobility and local-field mobility of electrons in MOS inversion layers Solid State Electron 34 545 1991
    • (1991) , vol.34 , pp. 545
    • Shin, H.1    Yeric, G.M.2    Tasch, A.F.3    Maziar, C.M.4
  • 13
    • 0025957008 scopus 로고
    • V. M. Agostinelli H. Shin A. F. Tasch Jr. Comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET's IEEE Trans. Electron Devices 38 151 1991 16 2365 65749
    • (1991) , vol.38 , pp. 151
    • Agostinelli, V.M.1    Shin, H.2    Tasch Jr., A.F.3
  • 14
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    • A. G. Sabvis J. T. Clemers Characterization of electron mobility in the inverted (100) surface IEDM Tech. Dig. 18 1979
    • (1979) , pp. 18
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  • 15
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    • S. C. Sun J. D. Plummer Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces IEEE Trans. Electron Devices 27 1497 1980
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  • 16
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    • S. Takagi M. Iwase A. Toriumi Effects of surface orientation on the universality of inversion-layer mobility in Si MOSFET's Ext. Abstr. 22nd Conf. Solid State Devices and Materials 275 1990
    • (1990) , pp. 275
    • Takagi, S.1    Iwase, M.2    Toriumi, A.3
  • 18
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    • M. A. Schmidt F. L. Terry Jr. B. P. Mathur S. D. Senturia Inversion layer mobility of MOSFET's with nitrided oxide gate dielectrics IEEE Trans. Electron Devices 35 1627 1988 16 385 7364
    • (1988) , vol.35 , pp. 1627
    • Schmidt, M.A.1    Terry Jr., F.L.2    Mathur, B.P.3    Senturia, S.D.4
  • 19
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    • J. Koomen Investigation of the MOST channel conductance in weak inversion Solid State Electron. 16 801 1973
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    • C. G. Sodini T. W. Ekstedt J. L. Moll Charge accumulation and mobility in thin dielectric MOS transistors Solid State Electron. 25 833 1982
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.