Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn 2004-January, Issue January, 2004, Pages 691-692

  Lee, B H ^a   Sim, J H ^b   Choi, R ^b   Bersuker, G ^d   Matthew, K ^d   Moumen, N ^a   Peterson, J J ^c   Larson, L ^d  

^a IBM   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c INTEL CORPORATION   (United States)

^d SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HOT CARRIERS; RELIABILITY;

CHANNEL LENGTH; CONTROL DEVICE; HFSION GATE DIELECTRICS; HOT CARRIER RELIABILITY; RELIABILITY CHARACTERISTICS; SHORT-CHANNEL DEVICES; TIME DEPENDENT; TRANSIENT CHARGING;

MOSFET DEVICES;

EID: 59949089252     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2004.1315454     Document Type: Conference Paper

References (11)

1. K. Onishi et al, IEDM, p.659, 2001
2. S.J. Lee et al., IEDM, p.78, 2002
3. Y.H. Kim et al., IEDM, p.629, 2002.
4. Y. Morisaki et al., IEDM, p.861, 2002.
5. Q. Lu et al., IRPS, p.429, 2002.
6. R. Degrave et al., IRPS, p.23, 2003.
7. P. Roussel et al., IRPS, p.29, 2003.
8. T. Yamaguchi et al., IRPS, p.34, 2003
9. A. Shanware et al., IRPS, p.208, 2003.
10. K Takeuchi et al., IEDM, p.883, 1993.
11. E. Li et al., IRPS, p.253, 1999.