Hot carrier degradation in HfSiONTiN fin shaped field effect transistor with different substrate orientations

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 468-471

  Young, Chadwin D ^a   Yang, Ji Woon ^a   Matthews, Kenneth ^a   Suthram, Sagar ^a   Hussain, Muhammad Mustafa ^a   Bersuker, Gennadi ^a   Smith, Casey ^a   Harris, Rusty ^a   Choi, Rino ^a   Lee, Byoung Hun ^a   Tseng, Hsing Huang ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT SUBSTRATES; FIELD EFFECTS; FIN LENGTHS; HOT-CARRIER DEGRADATIONS; HOT-CARRIER INJECTIONS; METAL-OXIDE SEMICONDUCTORS; SUBSTRATE ORIENTATIONS; SURFACE ORIENTATIONS;

CHARGE COUPLED DEVICES; CIVIL AVIATION; DEGRADATION; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); HOT CARRIERS; IMPACT IONIZATION; METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTOR MATERIALS; SUBSTRATES;

TRANSISTORS;

EID: 59949100260     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3072919     Document Type: Article

References (11)

1. S. A. Krishnan, Tech. Dig.-Int. Electron Devices Meet. 2006, 265.
2. Tsung-Yang Liow, Tech. Dig. VLSI Symp. 2006, 56.
3. M. A. Alam, Tech. Dig.-Int. Electron Devices Meet. 2003, 14.4.1.
4. M. M. Hussain (unpublished).
5. Taurus-Medici-2004.09 Users Manual, 2004.
6. J.-W. Yang, IEEE Int. Reliab. Phys. Symp. Proc. 2008, 739.
7. Yang-Kyu Choi, Daewon Ha, E. Snow, J. Bokor, and Tsu-Jae King, Tech. Dig.-Int. Electron Devices Meet. 2003, 177.
8. M. Takayanagi, T. Watanabe, R. Iijima, K. Ishimaru, and Y. Tsunashima, IEEE Int. Reliab. Phys. Symp. Proc. 2004, 13.
9. B. H. Lee, J. H. Sim, R. Choi, G. Bersuker, K. Matthew, N. Moumen, J. J. Peterson, and L. Larson, IEEE Int. Reliab. Phys. Symp. Proc. 2004, 691.
10. Hokyung Park, IEEE Electron Device Lett. 27, 662 (2006).
11. P. D. Kirsch, J. Appl. Phys. 99, 023508 (2006).