Carrier mobility in undoped triple-gate FinFET structures and limitations of its description in terms of top and sidewall channel mobilities

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3532-3541

  Rudenko, Tamara ^a   Kilchytska, Valeriya ^b   Collaert, Nadine ^c   Jurczak, Malgorzata ^c   Nazarov, Alexey ^a   Flandre, Denis ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^c IMEC   (Belgium)

Author keywords

FinFET; High k dielectrics; Mobility; Silicon on insulator (SOI); Surface orientation

Indexed keywords

CHARGE CARRIERS; CIVIL AVIATION; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; TRANSPORT PROPERTIES;

FINFET; HIGH-K DIELECTRICS; MOBILITY; SILICON-ON-INSULATOR (SOI); SURFACE ORIENTATION;

CARRIER MOBILITY;

EID: 57149137766     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006776     Document Type: Article

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