Reliability issues in MuGFET nanodevices

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 52-60

  Groeseneken, G ^b   Crupi, F ^a   Shickova, A ^b   Thijs, S ^b   Linten, D ^a   Kaczer, B ^a   Collaert, N ^a   Jurczak, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Bias temperature instability; Electrostatic discharge; Interface characterization; MuGFET; Multiple gate devices; TDDB

Indexed keywords

ARSENIC COMPOUNDS; COMPUTER NETWORKS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTROSTATIC DISCHARGE; NANOSTRUCTURED MATERIALS; PASSIVATION; PROCESS DESIGN; PROCESS ENGINEERING; RELIABILITY;

BIAS-TEMPERATURE INSTABILITY; INTERFACE CHARACTERIZATION; MUGFET; MULTIPLE GATE DEVICES; TDDB;

MOSFET DEVICES;

EID: 51549115488     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558863     Document Type: Conference Paper

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