Direct measurement of top and sidewall interface trap density in SOI FinFETs

IEEE Electron Device Letters

Volumn 28, Issue 3, 2007, Pages 232-234

  Kapila, G ^a,b   Kaczer, B ^b   Nackaerts, A ^b   Collaert, N ^b   Groeseneken, G V ^b  

^a TEXAS INSTRUMENTS   (India)

^b IMEC   (Belgium)

Author keywords

Charge pumping (CP); FinFETs; Interface traps; Silicon on insulator (SOI)

Indexed keywords

CHARGE CARRIERS; CRYSTAL ORIENTATION; DIODES; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY;

CHARGE PUMPING; INTERFACE TRAPS;

FIELD EFFECT TRANSISTORS;

EID: 34047217454     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.891263     Document Type: Article

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