New hot-carrier degradation phenomenon in nano-scale floating body MOSFETs

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 739-740

  Yang, J W ^a   Harris, H R ^b   Kang, C Y ^a   Young, C D ^a   Lee, K T ^c   Lee, H D ^d   Bersuker, G ^a   Lee, B H ^a   Tseng, H H ^a   Jammy, R ^e  

^a SEMATECH   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c Dept of Mechanical Engineering POSTECH   (United States)

^d Chungnam National University   (South Korea)

^e IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; IMPACT IONIZATION; IONIZATION POTENTIAL; NANOTECHNOLOGY; THRESHOLD VOLTAGE;

2-D DEVICE SIMULATIONS; DRAIN JUNCTIONS; FLOATING BODIES; HOT CARRIER DEGRADATION; HOT CARRIER INJECTION; HOT CARRIER STRESS; OHMIC VOLTAGE; SOURCE EXTENSION;

MOSFET DEVICES;

EID: 51549098408     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4559015     Document Type: Conference Paper

References (4)

1. International Technology Roadmap for Semiconductors. Austin, TX: SIA/SEMATECH, 2005.
2. Y.-K. Choi et al., IEDM Tech. dig., pp. 177-180, Dec. 2003.
3. Y. J. Ahn et al. IRPS, pp. 352 - 355, Apr. 2005.
4. Taurus-Medici-2004.09 Users Manual, Synopsis Inc., 2004