A study of strain engineering using CESL stressor on reliability comparing effect of intrinsic mechanical stress

IEEE Electron Device Letters

Volumn 30, Issue 7, 2009, Pages 760-762

  Lee, Kyong Taek ^a   Kang, Chang Yong ^b   Park, Min Sang ^b   Lee, Byoung Hun ^c   Park, Ho Kyung ^b   Hwang, Hyun Sang ^c   Tseng, Hsing Huang ^b   Jammy, Raj ^b   Jeong, Yoon Ha ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b SEMATECH   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Contact etch stop layer (CESL); Mechanical stress; Metal gate high ; Strained device

Indexed keywords

BENDING STRESS; CONTACT ETCH STOP LAYER (CESL); DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; HYDROGEN PASSIVATION; INTERFACE QUALITY; MECHANICAL STRESS; NITRIDE LAYERS; RELIABILITY CHARACTERISTICS; STRAIN ENGINEERING; STRAINED DEVICE;

HYDROGEN; NITRIDES; PASSIVATION; RELIABILITY; SEMICONDUCTOR QUANTUM DOTS;

STRESSES;

EID: 67650443968     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2021007     Document Type: Article

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