Valence band effective-mass expressions in the sp3d5s* empirical tight-binding model applied to a Si and Ge parametrization

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 11, 2004, Pages

  Boykin, Timothy B ^a   Klimeck, Gerhard ^b,c   Oyafuso, Fabiano ^b  

^a UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON DIOXIDE;

ALGORITHM; ANALYTIC METHOD; ARTICLE; ENERGY; MATHEMATICAL ANALYSIS; ROOM TEMPERATURE;

EID: 2142713157     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.115201     Document Type: Article

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