Applications of DCIV method to NBTI characterization

Microelectronics Reliability

Volumn 47, Issue 9-11 SPEC. ISS., 2007, Pages 1366-1372

  Neugroschel, A ^a   Bersuker, G ^b   Choi, R ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; INTERFACES (MATERIALS); RELAXATION PROCESSES; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

BULK OXIDE CHARGES; INTERFACE DEFECT DENSITY; SPIN-DEPENDENT RECOMBINATION (SDR); THRESHOLD VOLTAGE SHIFT;

GATE DIELECTRICS;

EID: 34548699133     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.07.037     Document Type: Article

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