Reliability of strained-Si devices with post-oxide-deposition strain introduction

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3432-3441

  Shickova, Adelina ^a,b   Verheyen, Peter ^a   Eneman, Geert ^a,b,c   Degraeve, Robin ^a   Simoen, Eddy ^a   Favia, Paola ^a   Klenov, Dmitri O ^d   San Andres, Enrique ^e   Kaczer, Ben ^a   Jurczak, Malgorzata ^a   Absil, Philippe ^a   Maes, Herman E ^a,b   Groeseneken, Guido ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

^d Thermo Fisher Scientific   (United States)

^e UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

Contact etch stop layer (CESL); Negative bias temperature instability (NBTI); SiGe source drain (S D); Uniaxial strain

Indexed keywords

CARRIER MOBILITY; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SILICON ALLOYS; THERMODYNAMIC STABILITY;

AS DEPOSITED; CHARGE PUMPING; CONTACT ETCH STOP LAYER (CESL); EQUIVALENT THICKNESSES; GATE STACKS; INDUCED STRAINS; INTRINSIC EFFECTS; NANOBEAM DIFFRACTIONS; NEGATIVE BIAS TEMPERATURE INSTABILITIES; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); NOISE MEASUREMENTS; PMOS DEVICES; POLYCRYSTAL LINES; PROCESSING STEPS; SI DEVICES; SIDE EFFECTS; SIGE SOURCE/DRAIN (S/D); SYSTEMATIC STUDIES; UNIAXIAL STRAIN; VERTICAL DIRECTIONS;

NEGATIVE TEMPERATURE COEFFICIENT;

EID: 57149134799     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006919     Document Type: Article

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