Impact of fin doping and gate stack on FinFET (110) and (100) electron and hole mobilities

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 351-353

  Akarvardar, Kerem ^a   Young, Chadwin D ^b   Baykan, Mehmet O ^c   Ok, Injo ^b   Ngai, Tat ^b   Ang, Kah Wee ^b   Rodgers, Martin P ^d   Gausepohl, Steven ^d   Majhi, Prashant ^e   Hobbs, Chris ^b   Kirsch, Paul D ^b   Jammy, Raj ^b  

^a IBM MICROELECTRONICS   (United States)

^b SEMATECH   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

^d STATE UNIVERSITY OF NEW YORK   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

FinFET; high K; metal gate; mobility

Indexed keywords

ACCUMULATION MODES; DOPING CONCENTRATION; DOUBLE-GATE; EFFECTIVE FIELD; FINFET; FINFETS; GATE STACKS; HIGH-K; INVERSION MODES; METAL GATE; MOBILITY DEGRADATION; POLY-SI ELECTRODE; TIN GATES;

BORON; CARRIER MOBILITY; ELECTRON MOBILITY; FORCED CONVECTION; HAFNIUM OXIDES; HOLE MOBILITY; INTEGRATED CIRCUITS; LOGIC GATES; PHOSPHORUS; SILICON COMPOUNDS; TITANIUM NITRIDE;

FINS (HEAT EXCHANGE);

EID: 84857457505     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2182603     Document Type: Article

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