Investigation of strain engineering in FinFETs comprising experimental analysis and numerical simulations

IEEE Transactions on Electron Devices

Volumn 58, Issue 6, 2011, Pages 1583-1593

  Conzatti, Francesco ^a   Serra, Nicola ^b   Esseni, David ^a   De Michielis, Marco ^c   Paussa, Alan ^a   Palestri, Pierpaolo ^a   Selmi, Luca ^a   Thomas, Stephen M ^d   Whall, Terence E ^d   Leadley, David ^d   Parker, E H C ^d   Witters, Liesbeth ^e   Hÿtch, Martin J ^f   Snoeck, Etienne ^f   Wang, T J ^g   Lee, W C ^g   Doornbos, Gerben ^h   Vellianitis, Georgios ^h   Van Dal, Mark J H ^h   Lander, R J P ^h  

^a UNIVERSITY OF UDINE   (Italy)

^b FONDAZIONE BRUNO KESSLER   (Italy)

^c CNR   (Italy)

^d UNIVERSITY OF WARWICK   (United Kingdom)

^e IMEC   (Belgium)

^f UNIVERSITÉ DE TOULOUSE   (France)

^g TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^h NXP TSMC Research Center   (Belgium)

Author keywords

FinFET; k p; mobility; Monte Carlo method; strain

Indexed keywords

COMPRESSIVE STRAIN; DEVICE OPTIMIZATION; DIRECT MEASUREMENT; ELECTRICAL MOBILITY; EXPERIMENTAL ANALYSIS; FIN WIDTHS; FINFET; FINFETS; HOLOGRAPHIC TECHNIQUE; METAL GATE; MOBILITY; MOBILITY ENHANCEMENT; MONTE CARLO SIMULATION; NANOSCALE MOSFETS; NUMERICAL SIMULATION; ON CURRENTS; P-TYPE; RIGOROUS MODELING; STRAIN COMPONENTS; STRAIN ENGINEERING; STRESS COMPONENT;

COMPUTER SIMULATION; ELECTRON MOBILITY; HOLE MOBILITY; MONTE CARLO METHODS; OPTIMIZATION;

INTEGRATED CIRCUITS;

EID: 79957662641     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2119320     Document Type: Article

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