Impact of gate-induced strain on MuGFET reliability

IEEE Electron Device Letters

Volumn 29, Issue 8, 2008, Pages 916-919

  Nathanael, Rhesa ^a   Xiong, Weize ^b   Cleavelin, C Rinn ^b   Liu, Tsu Jae King ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Hot carrier injection (HCI); Multiple gate field effect transistor (MuGFET); Negative bias temperature instability (NBTI); Reliability; Strained silicon

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; FINS (HEAT EXCHANGE); METALLIZING; METALS; MOS DEVICES; MOSFET DEVICES; NEGATIVE TEMPERATURE COEFFICIENT; NONMETALS; POLYSILICON; REFRACTORY METAL COMPOUNDS; SILICON; TECHNOLOGY; THERMODYNAMIC STABILITY; TRANSISTORS;

CONTROL DEVICES; DETRIMENTAL EFFECTS; FIN WIDTHS; GATE ELECTRODES; HOT CARRIER INJECTION (HCI); HOT-CARRIER INJECTION; INDUCED STRAIN; METAL-GATE ELECTRODES; MULTIPLE-GATE; MULTIPLE-GATE FIELD-EFFECT TRANSISTOR (MUGFET); NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); NEGATIVE BIAS- TEMPERATURE-INSTABILITY; POLY-SI; RELIABILITY; STRAINED SILICON;

FIELD EFFECT TRANSISTORS;

EID: 48649086252     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000944     Document Type: Article

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