Quantum transport simulation of strain and orientation effects in sub-20 nm silicon-on-insulator FinFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 1, 2011, Pages 4-10

  Liu, Keng Ming ^a   Register, Leonard F ^b   Banerjee, Sanjay K ^b  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^b The University of Texas at Austin   (United States)

Author keywords

Device simulation; FinFETs; orientation; quantum transport; scattering; silicon on insulator (SOI); strain

Indexed keywords

DEVICE SIMULATIONS; FINFETS; ORIENTATION; QUANTUM TRANSPORT; SILICON-ON-INSULATOR (SOI);

DRAIN CURRENT; INTEGRATED CIRCUITS; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; QUANTUM CONFINEMENT; QUANTUM ELECTRONICS; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; THREE DIMENSIONAL COMPUTER GRAPHICS;

QUANTUM CHEMISTRY;

EID: 78650921900     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2084090     Document Type: Article

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