The impact of uniaxial stress on subband structure and mobility of strain Si NMOSFETs

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 356-358

  Chang, S T ^a   Liao, S H ^a,b   Lin, C Y ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Mobility; Self consistent; Subband; Uniaxial stress

Indexed keywords

CONDUCTION BANDS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; HEAT CONDUCTION; MOSFET DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

BAND CALCULATIONS; BAND EDGES; CHANNEL DIRECTIONS; CONDUCTION BAND STRUCTURES; EFFECTIVE MASSES; MOBILITY; MOBILITY ENHANCEMENTS; NMOSFETS; SECOND ORDERS; SELF-CONSISTENT; STRAIN SIS; STRESS DISTORTIONS; SUBBAND; SUBBAND STRUCTURES; UNIAXIAL STRESS; UNIAXIAL STRESSES;

FIELD EFFECT TRANSISTORS;

EID: 54849428104     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.086     Document Type: Article

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