Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain

IEEE Electron Device Letters

Volumn 26, Issue 5, 2005, Pages 314-316

  Lauer, Isaac ^a   Antoniadis, D A ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

Mobility; MOSFET; Silicon on insulator (SOI) technology; Ultrathin silicon

Indexed keywords

ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; ELECTROSTATICS; QUANTUM ELECTRONICS; SILICON ON INSULATOR TECHNOLOGY; STRAIN; ULTRATHIN FILMS;

MOBILITY ENHANCEMENT; QUANTUM CONFINEMENT; ULTRATHIN SILICON;

MOSFET DEVICES;

EID: 19044392028     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.846582     Document Type: Article

References (12)

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