DC and low frequency noise characterization of FinFET devices

Solid-State Electronics

Volumn 53, Issue 12, 2009, Pages 1263-1267

  Bennamane, K ^a   Boutchacha, T ^a   Ghibaudo, G ^a   Mouis, M ^a   Collaert, N ^b  

^a IMEP LAHC   (France)

^b IMEC   (Belgium)

Author keywords

FinFET; LF noise; MOSFET

Indexed keywords

EXTRACTION TECHNIQUES; FIN WIDTHS; FINFET DEVICES; FINFETS; GATE LENGTH; GATE STACKS; INDUCED DEFECTS; LF NOISE; LOW TEMPERATURES; LOW-FREQUENCY NOISE; MOS-FET; MOSFETS; SUB-100 NM; TOP SURFACE; TRAP DENSITY;

CRYSTAL ORIENTATION; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); GATES (TRANSISTOR); MOSFET DEVICES; PARAMETER EXTRACTION; SILICON COMPOUNDS; SURFACE DEFECTS;

MOS DEVICES;

EID: 71649084105     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.09.032     Document Type: Article

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