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Volumn 72, Issue 4, 2011, Pages 49-80

Threshold voltage shifting for memory and tuning in printed transistor circuits

Author keywords

Charged Dielectrics; Circuit Tuning; Memory; Organic Transistors; Printed Electronics; Threshold Voltage

Indexed keywords

COMPUTER CIRCUITS; DATA STORAGE EQUIPMENT; FREQUENCY RESPONSE; TIMING CIRCUITS; TRANSISTORS; TUNING;

EID: 79955477304     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2010.11.001     Document Type: Review
Times cited : (42)

References (239)
  • 108
    • 33646264283 scopus 로고    scopus 로고
    • Organic field-effect transistors, inverters, and logic circuits on gate electrets
    • C. Huang, J.E. West, and H.E. Katz Organic field-effect transistors, inverters, and logic circuits on gate electrets V. Bharti, Y. BarCohen, Z.Y. Cheng, Q. Zhang, J. Madden, Electroresponsive Polymers and Their Applications 889 2006 241 255
    • (2006) Electroresponsive Polymers and Their Applications , vol.889 , pp. 241-255
    • Huang, C.1    West, J.E.2    Katz, H.E.3
  • 131
    • 33847206105 scopus 로고    scopus 로고
    • FEBRUARY
    • J.F. Scott Science 315 February 2007 954 959
    • (2007) Science , vol.315 , pp. 954-959
    • Scott, J.F.1
  • 132
    • 39349110724 scopus 로고    scopus 로고
    • Multiferroic magnetoelectric composites: Historical perspective, status, and future directions
    • FEBRUARY
    • C.W. Nan, M.I. Bichurin, S.X. Dong, D. Viehland, and G. Srinivasan Multiferroic magnetoelectric composites: historical perspective, status, and future directions Journal of Applied Physics 103 February 2008
    • (2008) Journal of Applied Physics , vol.103
    • Nan, C.W.1    Bichurin, M.I.2    Dong, S.X.3    Viehland, D.4    Srinivasan, G.5
  • 196
    • 0028532218 scopus 로고
    • Ultrafast operation of Vth-adjusted p+-n+ double-gate SOI MOSFETs
    • OCTOBER
    • T. Tanaka, K. Suzuki, H. Horie, and T. Sugii Ultrafast operation of Vth-adjusted p+-n+ double-gate SOI MOSFETs IEEE Electron Device Letters 15 October 1994 386 388
    • (1994) IEEE Electron Device Letters , vol.15 , pp. 386-388
    • Tanaka, T.1    Suzuki, K.2    Horie, H.3    Sugii, T.4
  • 236
    • 78649807634 scopus 로고    scopus 로고
    • Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors
    • n/a doi:10.1002/adma.201001865
    • Mathijssen, S.G.J., et al. Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors. Advanced Materials, n/a. doi:10.1002/adma.201001865.
    • Advanced Materials
    • Mathijssen, S.G.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.