An organic nonvolatile memory using space charge polarization of a gate dielectric

Thin Solid Films

Volumn 518, Issue 2, 2009, Pages 534-536

  Konno, Kodai ^a   Sakai, Heisuke ^a   Matsushima, Toshinori ^a   Murata, Hideyuki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

10 Methyl 9 phenylacridinium perchlorate (MPA+ClO4 ); Gate dielectric; Organic field effect transistor (OFET); Organic nonvolatile memory; Polymethylmethacryrate (PMMA); Space charge polarization

Indexed keywords

10-METHYL-9-PHENYLACRIDINIUM PERCHLORATE (MPA+CLO4-); ORGANIC FIELD-EFFECT TRANSISTOR (OFET); ORGANIC NONVOLATILE MEMORY; POLYMETHYLMETHACRYRATE (PMMA); SPACE CHARGE POLARIZATION;

DRAIN CURRENT; ELECTRIC SPACE CHARGE; ELECTROPHORESIS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); POLARIZATION;

PHASE TRANSITIONS;

EID: 70349869052     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.07.014     Document Type: Article

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