Organic thin-film memory

MRS Bulletin

Volumn 29, Issue 11, 2004, Pages

  Yang, Yang ^a   Ma, Liping ^a   Wu, Jianhua ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b JACKSON STATE UNIVERSITY   (United States)

Author keywords

Nonvolatile memory; OBD; Organic electrical bistable devices; Rewritable memory; Thin films

Indexed keywords

ELECTRIC POTENTIAL; ELECTRODES; ORGANIC POLYMERS; PERMITTIVITY; SUPRAMOLECULAR CHEMISTRY; THIN FILMS;

NONVOLATILE MEMORY; ORGANIC THIN-FILMS; REWRITABLE MEMORY;

NONVOLATILE STORAGE;

EID: 19744382387     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs2004.237     Document Type: Review

References (31)

1. J. Campbell Scott, Science 304 (2004) p. 62.
2. LP. Ma, W.J. Yang, S.S. Xie, and S.J. Pang, Appl. Phys. Lett. 73 (1998) p. 3303; M.I. Lutwyche, M. Despont, U. Drechsler, U. Dürig, W. Häberle, H. Rothuizen, R. Stutz, R. Widmer, G.K. Binnig, and P. Vettiger, Appl Phys. Lett. 77 (2000) p. 3299.
3. LP. Ma, W.J. Yang, S.S. Xie, and S.J. Pang, Appl. Phys. Lett. 73 (1998) p. 3303; M.I. Lutwyche, M. Despont, U. Drechsler, U. Dürig, W. Häberle, H. Rothuizen, R. Stutz, R. Widmer, G.K. Binnig, and P. Vettiger, Appl Phys. Lett. 77 (2000) p. 3299.
4. Li-Jie, E. Schreck, and K. Dransfeld, Appl. Phys. A 53 (1991) p. 457.
5. R.S. Potember and T.O. Poehler, Appl. Phys. Lett. 34 (1979) p. 407.
6. H. Carchano, R. Lacoste, and Y. Segui, Appl. Phys. Lett. 19 (1971) p. 414.
7. H.K. Henish and W.R. Smith, Appl. Phys. Lett. 24 (1974) p. 589.
8. Y. Segui, Bui Ai, and H. Carchano, J. Appl. Phys. 47 (1976) p. 140.
9. H. Carchano, R. Lacoste, and Y. Segui, Appl. Phys. Lett. 19 (1979) p. 414.
10. T. Oyamada, H. Tanaka, K. Matsushige, H. Sasabe, and C. Adachi, Appl. Phys. Lett. 83 (2003) p. 1252.
11. A. Bandyopadhyay and A.J. Pal, Appl. Phys. Lett. 82 (2003) p. 1215.
12. S. Moller, C. Perlov, W. Jackson, C. Taussig, and S.R. Forrest, Nature 426 (2003) p. 166.
13. S. Moller, S.R. Forrest, C. Perlov, W. Jackson, and C. Taussig, J. Appl. Phys. 94 (2003) p. 7811.
14. L.P. Ma, Q.F. Xu, and Y. Yang, Appl. Phys. Lett. 84 (2004) p. 4908.
15. Y. Yang, L.P. Ma, and J. Liu, U.S. Patent Pending, US 01/17206 (2001).
16. L.P. Ma, J. Liu, S.M. Pyo, and Y. Yang, Appl. Phys. Lett. 80 (2002) p. 362.
17. L.P. Ma, J. Liu, and Y. Yang, Appl. Phys. Lett. 80 (2002) p. 2997.
18. L.P. Ma, J. Liu, S.M. Pyo, Q.F. Xu, and Y. Yang, Mol. Cryst. Liq. Cryst, 378 (2002) p. 185.
19. L.P. Ma, S.M. Pyo, Q.F. Xu, and Y. Yang, Appl. Phys. Lett. 82 (2003) p. 1419.
20. J. Hubbard, Proc. R, Soc. London, Ser. A 276 (1963) p. 238; J.H. Wu, L.P. Ma, and Y. Yang, Phys. Rev. B 69 (2004) p. 11531.
21. J. Hubbard, Proc. R, Soc. London, Ser. A 276 (1963) p. 238; J.H. Wu, L.P. Ma, and Y. Yang, Phys. Rev. B 69 (2004) p. 11531.
22. L.D. Bozano, B.W. Kean, V.R. Deline, J.R. Salem, and J.C. Scott, Appl Phys. Lett. 26 (2004) p. 607.
23. G. Jabbour, private communication.
24. C.P. Collier, G. Mattersteig, E.W. Wong, Y. Luo, K. Beverly, J. Sampaio, F.M. Raymo, J.F. Stoddart, and J.R. Heath, Science 289 (2000) p. 1172.
25. A.R. Pease, J.O. Jeppesen, J.F. Stoddart, Y. Luo, C.P. Collier, and J.R. Heath, Acc. Chem. Res. 34 (2001) p. 433.
26. Y Chen, D.A.A. Ohlberg, X. Li, D.R. Stewart, R.S. Williams, J.O. Jeppesen, K.A. Nielsen, J.F. Stoddart, D.L. Olynick, and E. Anderson, Appl. Phys. Lett. 82 (2003) p. 1610.
27. M.A. Reed, J. Chen, A.M. Rawlett, D.W. Price, and J.M. Tour, Appl. Phys. Lett. 78 (2001) p. 3735.
28. J.M. Seminario, A.G. Zacarias, and J.M. Tour, J. Am. Chem. Soc. 122 (2000) p. 3015.
29. J.M. Seminario, A.G. Zacarias, and P.A. Derosa, J. Phys. Chem. A 105 (2001) p. 791.
30. J. Cornil, Y. Karzazi, and J.L. Bredas, J. Am. Chem. Soc. 124 (2002) p. 3516.
31. J. Taylor, M. Brandbyge, and K. Stokbro, Phys. Rev. B 68 121101 (2003).