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Volumn 46, Issue 19, 2010, Pages 1335-1336

Optimum bias of CMOS organic field effect transistor inverter through threshold adjustment of both p- and n-type devices

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INVERTERS; HYBRID FABRICATION; MAXIMUM GAIN; NEGATIVE CHARGE; ORGANIC FET; P-TYPE;

EID: 77956821911     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.1603     Document Type: Article
Times cited : (6)

References (12)
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  • 2
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  • 5
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    • Dipolar chromophore functional layers in organic field effect transistors
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  • 6
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    • Deshmukh, K.D., Reuter, K., Kempa, H., West, J.E., and Katz, H.E.: ' Tuning of threshold voltage in organic field-effect transistors with hydrophobic gate dielectric using monoenergetic low-energy electron beams and triode corona ', Appl. Phys. Lett., 2009, 95, (11), p. 113307 0003-6951
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    • Deshmukh, K.D.1    Reuter, K.2    Kempa, H.3    West, J.E.4    Katz, H.E.5
  • 7
    • 72649104025 scopus 로고    scopus 로고
    • Full-swing organic inverters using a charged perfluorinated electret fabricated by means of mass-printing technologies
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    • Reuter, K., Kempa, H., Deshmukh, K.D., Katz, H.E., and Huebler, A.C.: ' Full-swing organic inverters using a charged perfluorinated electret fabricated by means of mass-printing technologies ', Org. Electron., 2010, 11, (1), p. 95-99 1566-1199
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    • Sakai, H., Konno, K., and Murata, H.: ' Control of threshold voltage of organic field-effect transistors by space charge polarisation ', Thin Solid Films, 2030, 518, (2), p. 510-513 0040-6090
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.