Observation of field-effect transistor behavior at self-organized interfaces

Advanced Materials

Volumn 16, Issue 18, 2004, Pages 1609-1615

  Chua, Lay Lay ^a   Ho, Peter K H ^a,b   Sirringhaus, Henning ^a   Friend, Richard H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC BREAKDOWN; FIELD-EFFECT CONDUCTION; FIELD-EFFECT MOBILITIES; MICROROUGHNESS;

ASSEMBLY; CONTAMINATION; CROSSLINKING; DECOMPOSITION; DIELECTRIC MATERIALS; EVAPORATION; GLASS TRANSITION; INTERFACES (MATERIALS); MOLECULAR WEIGHT; PASSIVATION; SOLVENTS; SURFACE ROUGHNESS;

FIELD EFFECT TRANSISTORS;

EID: 8344273605     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200400392     Document Type: Article

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