Low-voltage, high-mobility pentacene transistors with solution-processed high dielectric constant insulators

Advanced Materials

Volumn 11, Issue 16, 1999, Pages 1372-1375

  Dimitrakopoulos, Christos D ^a   Kymissis, Ioannis ^a   Purushothaman, Sampath ^a   Neumayer, Deborah A ^a   Duncombe, Peter R ^a   Laibowitz, Robert B ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; ELECTRIC INSULATORS; GATES (TRANSISTOR); MATHEMATICAL MODELS; PERMITTIVITY; SEMICONDUCTING FILMS;

BARIUM STRONTIUM TITANATE; INSULATED-GATE FIELD EFFECT TRANSISTORS (IGFET);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033353420     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4095(199911)11:16<1372::AID-ADMA1372>3.0.CO;2-V     Document Type: Article

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