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Applied Physics A: Materials Science and Processing

Volumn 95, Issue 1, 2009, Pages 43-48

Continuous tuning of the threshold voltage of organic thin-film transistors by a chemically reactive interfacial layer

(6) Etschmaier, Harald a Pacher, Peter a Lex, Alexandra b,c Trimmel, Gregor b Slugovc, Christian b Zojer, Egbert a

a GRAZ UNIVERSITY OF TECHNOLOGY (Austria)

b GRAZ UNIVERSITY OF TECHNOLOGY (Austria)

c UNIVERSITY OF MÜNSTER (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; INTEGRATED CIRCUITS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TUNING;

CHARGE-CARRIER MOBILITIES; CONTINUOUS TUNING; DEVICE CHARACTERISTICS; GATE OXIDES; INTERFACIAL LAYERS; NON-INVASIVE METHODS; ORGANIC THIN-FILM TRANSISTORS; SEMICONDUCTOR-DIELECTRIC INTERFACES; TRANSISTOR CHARACTERISTICS;

TRANSISTORS;

EID: 60749102617 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-008-4995-z Document Type: Article

Times cited : (16)

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