Control of threshold voltage of organic field-effect transistors by space charge polarization

Thin Solid Films

Volumn 518, Issue 2, 2009, Pages 510-513

  Sakai, Heisuke ^a   Konno, Koudai ^a   Murata, Hideyuki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Gate dielectric; Organic field effect transistors (OFETs); Polarization; Threshold voltage shift

Indexed keywords

ACTIVE LAYER; DIFFERENTIAL ABSORPTION; DISPERSED POLYMERS; EXTERNAL ELECTRIC FIELD; ION PAIRS; ORGANIC FIELD-EFFECT TRANSISTORS; ORGANIC FIELD-EFFECT TRANSISTORS (OFETS); SPACE CHARGE POLARIZATION; THRESHOLD VOLTAGE SHIFT;

DIELECTRIC MATERIALS; DRAIN CURRENT; ELECTRIC FIELDS; ELECTROPHORESIS; GATE DIELECTRICS; GATES (TRANSISTOR); IONS; MOS CAPACITORS; POLARIZATION; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 70349876274     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.07.012     Document Type: Article

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