Low-voltage organic transistors with an amorphous molecular gate dielectric

Nature

Volumn 431, Issue 7011, 2004, Pages 963-966

  Halik, Marcus ^a   Klauk, Hagen ^a   Zschieschang, Ute ^a   Schmid, Günter ^a   Dehm, Christine ^a   Schütz, Markus ^b   Malsch, Steffen ^b   Effenberger, Franz ^b   Brunnbauer, Markus ^c   Stellacci, Francesco ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAR CODES; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ENERGY DISSIPATION; GATES (TRANSISTOR); MOLECULAR DYNAMICS; SELF ASSEMBLY; SEMICONDUCTING SILICON; SENSORS; THIN FILM TRANSISTORS;

CAPACITIVE COUPLING; GATE DIELECTRICS;

SEMICONDUCTING ORGANIC COMPOUNDS;

INORGANIC COMPOUND; OXIDE; POLYMER; SILICON DERIVATIVE;

PHYSICS;

ARTICLE; DEVICE; DIELECTRIC CONSTANT; ELECTRONIC SENSOR; ELECTRONICS; FILM; INSULATOR ELEMENT; MATERIALS; MOLECULAR BIOLOGY; MOLECULAR MODEL; MONOLAYER CULTURE; PRIORITY JOURNAL; SELF ASSEMBLED MONOLAYER; SEMICONDUCTOR; THICKNESS; THIN FILM TRANSISTOR;

EID: 7244254578     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature02987     Document Type: Article

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