Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6431-6438

  Pernstich, K P ^a   Haas, S ^a   Oberhoff, D ^a   Goldmann, C ^a   Gundlach, D J ^a   Batlogg, B ^a   Rashid, A N ^a,b   Schitter, G ^a,c  

^a ETH ZURICH   (Switzerland)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATRIX DISPLAYS; DIPOLE MONOLAYERS; GATE INSULATOR; PRECISE CONTROL;

CARRIER CONCENTRATION; ELECTRIC INSULATORS; ELECTRON ENERGY LEVELS; FIELD EFFECT TRANSISTORS; SELF ASSEMBLY; SEMICONDUCTING ORGANIC COMPOUNDS; SINGLE CRYSTALS;

THRESHOLD VOLTAGE;

EID: 20744459761     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1810205     Document Type: Article

References (56)

1. H. Klauk, M. Halik, U. Zschieschang, G. Schmid, W. Radlik, and W. Weber, J. Appl. Phys. 92, 5259 (2002).
2. T. W. Kelley, D. V. Muyres, P. F. Baude, T. P. Smith, and T. D. Jones, Mater. Res. Soc. Symp. Proc. 771, L6.5.1 (2003).
3. S. K. Moore, IEEE Spectrum 39, 55 (2002).
4. D. Knipp, R. A. Street, A. Völkel, and J. Ho, J. Appl. Phys. 93, 347 (2003).
5. A. Salleo and R. A. Street, J. Appl. Phys. 94, 471 (2003).
6. R. A. Street, A. Salleo, and M. L. Chabinyc, Phys. Rev. B 68, 085316 (2003).
7. J. E. Northrup and M. L. Chabinyc, Phys. Rev. B 68, 041202 (2003).
8. H. L. Gomes et al., Appl. Phys. Lett. 84, 3184 (2004).
9. A. R. Völkel, R. A. Street, and D. Knipp, Phys. Rev. B 66, 195336 (2002).
10. H. E. Katz, X. M. Hong, A. Dodabalapur, and R. Sarpeshkar, J. Appl. Phys. 91, 1572 (2002).
11. T. Li, J. W. Balk, P. P. Ruden, I. H. Campbell, and D. L. Smith, J. Appl. Phys. 91, 4312 (2002).
12. R. Schroeder, L. A. Majewski, and M. Grell, Appl. Phys. Lett. 83, 3201 (2003).
13. Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Trans. Electron Devices 18, 1325 (1997).
14. A. Salleo, M. L. Chabinyc, M. S. Yang, and R. A. Street, Appl. Phys. Lett. 81, 4383 (2002).
15. S. Kobayashi et al., Nat. Mater. 3, 317 (2004).
16. M. E. McGovern, K. M. R. Kallury, and M. Thompson, Langmuir 10, 3607 (1994).
17. N. Tillman, A. Ulman, J. S. Schildkraut, and T. L. Penner, J. Am. Chem. Soc. 110, 6136 (1988).
18. D. L. Angst and G. W. Simmons, Langmuir 7, 2236 (1991).
19. C. Goldmann, S. Haas, C. Krellner, K. P. Pernstich, D. J. Gundiach, and B. Batlogg, J. Appl. Phys. 96, 2080 (2004).
20. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1987).
21. E. J. Meijer, C. Tanase, P. W. M. Blom, E. van Veenendaal, B.-H. Huisman, D. M. de Leeuw, and T. M. Klapwijk, Appl. Phys. Lett. 80, 3838 (2002).
22. M. Shtein, J. Mapel, J. B. Benziger, and S. R. Forrest, Appl. Phys. Lett. 81, 268 (2002).
23. D. J. Gundlach, L. Zhou, J. A. Nichols, C. D. Sheraw, C.-C. S. Kuo, and T. N. Jackson (unpublished).
24. C. Tanase, E. J. Meijer, P. M. Blom, and D. M. de Leeuw, Org. Electron. 4, 33 (2003).
25. F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini, and D. M. de Leuw, Phys. Rev. Lett. 92, 116802 (2004).
26. M. E. Hajlaoui, F. Gamier, L. Hassine, F. Kouki, and H. Bouchriha, Synth. Met. 129, 215 (2002).
27. C. D. Dimitrakopoulos, A. R. Brown, and A. Pomp, J. Appl. Phys. 80, 2501 (1996).
28. I. P. M. Bouchoms, W. A. Schoonveld, J. Vrijmoeth, and T. M. Klapwijk, Synth. Met. 104, 175 (1999).
29. C. C. Mattheus, A. B. Dros, J. Baas, G. T. Oostergetel, A. Meetsma, J. L. de Boer, and T. T. M. Palstra, Synth. Met. 138, 475 (2003).
30. Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997).
31. J. L. Brédas, J. P. Calbert, D. A. da Silva Filho, and J. Comil, Proc. Natl. Acad. Sci. U.S.A. 99, 5804 (2002).
32. I. H. Campbell et al., Phys. Rev. B 54, R14321 (1996).
33. H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Adv. Mater. (Weinheim, Ger.) 11, 605 (1999).
34. H. Sugimura, K. Hayashi, N. Saito, N. Nakagiri, and O. Takai, Appl. Surf. Sci. 188, 403 (2002).
35. Z. Vager and R. Naaman, Chem. Phys. 281, 305 (2002).
36. N. J. Watkins and Y. Gao, J. Appl. Phys. 94, 5782 (2003).
37. Y. Tsividis, Operation and Modeling of the MOS Transistor, 2nd ed. (McGraw-Hill, New York, 1999).
38. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1991).
39. D. B. A. Rep, A. F. Morpurgo, W. G. Sloof, and T. M. Klapwijk, J. Appl. Phys. 93, 2082 (2003).
40. D. W. Greve, Field Effect Devices and Applications: Devices for Portable, Low-power, and Imaging Systems (Prentice Hall, Englewood Cliff, NJ, 1998).
41. D. Vuillaume, C. Boulas, J. Collet, J. V. Davidovits, and F. Rondelez, Appl. Phys. Lett. 69, 1646 (1996).
42. D. Monroe, Phys. Rev. Lett. 54, 146 (1985).
43. V. I. Arkhipov, J. Reynaert, Y. D. Jin, P. Heremans, E. V. Emelianova, G. J. Adriaenssens, and H. Bässler, Synth. Met. 138, 209 (2003).
44. M. Shur and M. Hack, J. Appl. Phys. 55, 3831 (1984).
45. D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez, Phys. Rev. Lett. 93, 086802 (2004).
46. G. Horowitz and P. Delannoy, J. Appl. Phys. 70, 469 (1991).
47. R. V. R. Balakrishnan, A. K. Kapoor, V. Kumar, S. C. Jain, R. Mertens, and S. Annapoorni, J. Appl. Phys. 94, 5302 (2003).
48. J. Veres, S. D. Ogier, S. W. Leeming, D. C. Cupertino, and S. M. Khaffaf, Adv. Funct. Mater. 13, 199 (2003).
49. A. K. Kadashchuk, N. I. Ostapenko, Yu. A. Skryshevskil, V. I. Sugakov, T. O. Susokolova, and M. T. Shpak, Phys. Solid State 35, 840 (1993).
50. E. A. Silinsh and V. tapek, Organic Molecular Crystals: Interaction, Localization, and Transport Phenomena (AIP, New York, 1994).
51. J. Takeya, C. Goldmann, S. Haas, K. P. Pernstich, B. Ketterer, and B. Batlogg, J. Appl. Phys. 94, 5800 (2003).
52. R. W. I. de Boer, T. M. Klapwijk, and A. F. Morpurgo, Appl. Phys. Lett. 83, 4345 (2003).
53. W. G. Williams, Discuss. Faraday Soc. 51, 61 (1971).
54. V. C. Sundar et al. Science 303, 1644 (2004).
55. J. Takeya et al. (unpublished).
56. D. Oberhoff et al. (unpublished).