Effects of polarized organosilane self-assembled monolayers on organic single-crystal field-effect transistors

Applied Physics Letters

Volumn 85, Issue 21, 2004, Pages 5078-5080

  Takeya, J ^a,b,c,d,e   Nishikawa, T ^b,c,d,e   Takenobu, T ^b,c,d,e   Kobayashi, S ^b,c,d,e   Iwasa, Y ^b,c,d,e   Mitani, T ^d,e   Goldmann, C ^e   Krellner, C ^e   Batlogg, B ^e  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^e ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GRAIN BOUNDARIES; POLARIZATION; SELF ASSEMBLY; SILANES; SINGLE CRYSTALS; THRESHOLD VOLTAGE;

CHARGE INJECTION; ORGANOSILANES; SURFACE CONDUCTIVITY; THRESHOLD GATE VOLTAGE;

MONOLAYERS;

EID: 19144363505     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1826239     Document Type: Article

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