Memory performance and retention of an all-organic ferroelectric-like memory transistor

IEEE Electron Device Letters

Volumn 26, Issue 2, 2005, Pages 69-71

  Schroeder, Raoul ^a   Majewski, Leszek A ^a   Voigt, Monika ^a   Grell, Martin ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Ferroelectric memory; Nonvolatile memory; Organic compounds; Plastics

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; DATA STORAGE EQUIPMENT; FERROELECTRIC DEVICES; HIGH TEMPERATURE EFFECTS; ORGANIC COMPOUNDS; PLASTICS; POLYMERS;

CHANNEL RESITANCE MODULATION; FERROELECTRIC MEMORY; NONVOLATILE MEMORY;

FIELD EFFECT TRANSISTORS;

EID: 13444305307     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.841186     Document Type: Article

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