Molecular ordering and interface state modification for reducing bias-induced threshold voltage shift in pentacene field-effect transistors

Journal of the Electrochemical Society

Volumn 155, Issue 8, 2008, Pages

  Park, Chang Bum ^a,b   Yokoyama, Takamichi ^a   Nishimura, Tomonori ^a   Kita, Koji ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; CHEMICAL MODIFICATION; ELECTROMAGNETIC INDUCTION; ELECTROMAGNETISM; FUNCTIONAL GROUPS; INDUCTANCE; MAGNETISM; MOLECULES; PHOTOACOUSTIC EFFECT; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE CHEMISTRY; SURFACE TENSION; THRESHOLD VOLTAGE; TRANSISTORS;

ALKYL CHAINS; DIELECTRIC SURFACES; ELECTROCHEMICAL SOCIETY (ECS); FIELD EFFECT TRANSISTOR (FET); FORBIDDEN GAPS; GATE BIAS DEPENDENCE; GATE BIAS STRESS; INTERFACE REGIONS; INTERFACE STATES; MOLECULAR ORDERING; PENTACENE (PEN); SI O2 SURFACE; SITE FORMATION; STRUCTURAL ORDERING; SURFACE ENERGIES; THRESHOLD VOLTAGE SHIFTS;

FIELD EFFECT TRANSISTORS;

EID: 46649114430     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2938372     Document Type: Article

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