Comparison of MONOS memory device integrity when using Hf1-x-yNxOy trapping layers with different N compositions

IEEE Transactions on Electron Devices

Volumn 55, Issue 6, 2008, Pages 1417-1423

  Yang, H J ^a   Cheng, C F ^b   Chen, W B ^a   Lin, S H ^c   Yeh, F S ^c   McAlister, S P ^d   Chin, Albert ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Erase; High ; Nonvolatile memory; Program

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC POTENTIAL; NITROGEN; NONVOLATILE STORAGE; TANTALUM COMPOUNDS;

HIGH-TEMPERATURE RETENTION; MEMORY WINDOW; PROGRAM/ERASE (P/E) VOLTAGE;

DATA STORAGE EQUIPMENT;

EID: 44949226211     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.920973     Document Type: Article

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