Concept of `threshold voltage' in organic field-effect transistors

Advanced Materials

Volumn 10, Issue 12, 1998, Pages 923-927

  Horowitz, Gilles ^a   Hajlaoui, Riadh ^a   Bouchriha, Habib ^a   Bourguiga, Ramzi ^a   Hajlaoui, Mohcen ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CARRIER MOBILITY; CHARGE TRANSFER; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RESISTANCE; MATHEMATICAL MODELS; SEMICONDUCTING ORGANIC COMPOUNDS; THRESHOLD VOLTAGE;

DRAIN CURRENTS; ORGANIC FIELD EFFECT TRANSISTORS (OFET); ZERO VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0032141570     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4095(199808)10:12<923::AID-ADMA923>3.0.CO;2-W     Document Type: Article

References (17)