Control of carrier density by self-assembled monolayers in organic field-effect transistors

Nature Materials

Volumn 3, Issue 5, 2004, Pages 317-322

  Kobayashi, S ^a,b   Nishikawa, T ^c,d   Takenobu, T ^a,b   Mori, S ^a   Shimoda, T ^c,d   Mitani, T ^d   Shimotani, H ^a,b   Yoshimoto, N ^e   Ogawa, S ^e   Iwasa, Y ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c SEIKO EPSON CORPORATION   (Japan)

^d JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^e IWATE UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRODES; ELECTRONS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); ION IMPLANTATION; THIN FILM TRANSISTORS; THIN FILMS;

FIELD-EFFECT MOBILITY; GATE INSULATORS; INORGANIC SEMICONDUCTORS; ORGANIC FILMS;

SELF ASSEMBLY;

ORGANIC COMPOUND; SILANE DERIVATIVE; SILICON DIOXIDE;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; METHODOLOGY; NANOTECHNOLOGY; SEMICONDUCTOR;

COMPUTER SIMULATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOTECHNOLOGY; ORGANIC CHEMICALS; SILANES; SILICON DIOXIDE; TRANSISTORS;

EID: 2342639588     PISSN: 14761122     EISSN: None     Source Type: Journal    
DOI: 10.1038/nmat1105     Document Type: Article

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