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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 27, Issue 3, 2009, Pages 1116-1121

Effect of nanocomposite gate dielectric roughness on pentacene field-effect transistor

(2) Lee, Wen His a Wang, C C a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BLENDING; DIELECTRIC DEVICES; DIELECTRIC FILMS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN SIZE AND SHAPE; NANOCOMPOSITES; POLYIMIDES; SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE ROUGHNESS; THIN FILM TRANSISTORS;

BLENDING POLYIMIDE; DIELECTRIC ROUGHNESS; GRAIN SIZE; ORGANIC THIN FILM TRANSISTORS; PENTACENES; POLYMER GATE DIELECTRICS;

NANOCOMPOSITE FILMS;

EID: 77953870098 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3117360 Document Type: Conference Paper

Times cited : (16)

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