Influence of dielectric surface chemistry on the microstructure and carrier mobility of an n-type organic semiconductor

Advanced Functional Materials

Volumn 19, Issue 15, 2009, Pages 2365-2372

  Dhagat, Parul ^b   Haverinen, Hanna M ^c   Kline, R Joseph ^a   Jung, Youngsuk ^a   Fischer, Daniel A ^a   DeLongchamp, Dean M ^a   Jabbour, Ghassan E ^b  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF OULU   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

BENZIMIDAZOLES; CHARGE TRAP; DIELECTRIC SURFACE; FILM DEPOSITION; GROWTH HABIT; HIGH QUALITY; HYDROPHOBIC MONOLAYERS; MICROSTRUCTURE EVOLUTIONS; MONOLAYER COVERAGE; N-TYPE ORGANIC SEMICONDUCTOR; OCTADECYLTRICHLOROSILANE; OXIDE SURFACE; PERYLENES; PREFERRED ORIENTATIONS; SILICON DIOXIDE; SUBSTRATE TEMPERATURE; UNIT CELLS;

CELL MEMBRANES; DEPOSITION; ELECTRON ENERGY LEVELS; MICROSTRUCTURE; MONOLAYERS; OXIDE FILMS; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTOR GROWTH; SILANES; SILICA; SURFACE CHEMISTRY;

CARRIER MOBILITY;

EID: 68249104680     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.200900298     Document Type: Article

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