A simple and unambiguous definition of threshold voltage and its implications in deep-submicron MOS device modeling

IEEE Transactions on Electron Devices

Volumn 46, Issue 4, 1999, Pages 807-809

  Zhou, X ^a,b   Lim, K Y ^a   Lim, D ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Deep submicron MOSFET modeling; DIBL; MOS threshold voltage

Indexed keywords

ALGORITHMS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; EXTRAPOLATION; MATHEMATICAL MODELS; MOS DEVICES; MOSFET DEVICES; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

CONSTANT CURRENT METHOD; DEEP SUBMICRON MOS DEVICE; DRAIN INDUCED BARRIER LOWERING;

THRESHOLD VOLTAGE;

EID: 0032651256     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.753720     Document Type: Article

References (10)

1. A. Akers and J. J. Sanchez, "Threshold voltage models of short, narrow, and small geometry MOSFET's: A review," Solid-State Electron., vol. 25, no. 7, pp. 621-641, 1982.
2. J. J. Liou, A. Ortiz-Conde, and F. G. Sanchez, "Extraction of the threshold voltage of MOSFET's: An overview," in Proc. IEEE HKEDM'97, Hong Kong, 1997, pp. 31-38.
3. Z. X. Yan and M. J. Deen, "Physically-based method for measuring the threshold voltage of MOSFET's," in Proc. Inst. Elect. Eng. G, 1991, vol. 138, no. 3, pp. 351-357.
4. H. S. Wong, M. H. White, T. J. Krutsick, and R. V. Booth, "Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET's," Solid-State Electron., vol. 30, no. 9, pp. 953-968, 1987.
5. S. Jain, "Measurement of threshold voltage and channel length of submicron MOSFET's," in Proc. Inst. Elect. Eng. G, 1988, vol. 135, p. 162.
6. X. Zhou, K. Y. Lim, and D. Lim, "A general approach to compact threshold voltage formulation based on 2-D numerical simulation and experimental correlation for deep-submicron ULSI technology development," submitted for publication.
7. Z.-H. Liu, C. Hu, J.-H. Huang, T.-Y. Chan, M.-C. Jeng, P. K. Ko, and Y. C. Cheng, "Threshold voltage model for deep-submicrometer MOSFET's," IEEE Trans. Electron Devices, vol. 40, pp. 86-94, Jan. 1993.
8. K. Y. Lim and X. Zhou, "Modeling of threshold voltage with nonuniform substrate doping," in Proc. IEEE ICSE, Malaysia, Nov. 1998, pp. 27-31.
9. X. Zhou, K. Y. Lim, and D. Lim, "A new 'critical-current at linearthreshold' method for direct extraction of deep-submicron MOSFET effective channel length," submitted for publication.
10. X. Zhou and W. Long, "A novel hetero-material gate (HMG) MOSFET for deep-submicron ULSI technology," IEEE Trans. Electron Devices, vol. 45, pp. 2546-2548, Dec. 1998.