Solution-deposited sodium beta-alumina gate dielectrics for low-voltage and transparent field-effect transistors

Nature Materials

Volumn 8, Issue 11, 2009, Pages 898-903

  Pal, Bhola N ^a   Dhar, Bal Mukund ^a   See, Kevin C ^a   Katz, Howard E ^a  

^a Johns Hopkins University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; CAPACITANCE; CONDUCTING POLYMERS; DIELECTRIC MATERIALS; ELECTRODES; GATE DIELECTRICS; ITO GLASS; METAL IONS; OXIDE FILMS; OXYGEN SENSORS; SILICON WAFERS; SOL-GELS; SUBSTRATES; TIN; TIN OXIDES; TRANSISTORS; ZINC;

AMORPHOUS DIELECTRICS; FLEXIBLE POLYIMIDE; LOWER TEMPERATURES; POLY-3 ,4-ETHYLENEDIOXYTHIOPHENE; SOLUTION-PROCESSED; TRANSPARENT OXIDES; TWO-DIMENSIONAL CONDUCTIVITY; ZINC-TIN-OXIDE (ZTO);

FIELD EFFECT TRANSISTORS;

EID: 70350468172     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2560     Document Type: Article

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