N-channel operation of pentacene thin-film transistors with ultrathin polymer gate buffer layer

Synthetic Metals

Volumn 160, Issue 1-2, 2010, Pages 83-87

  Noda, Kei ^a   Tanida, Shinji ^a   Kawabata, Hiroshi ^b   Matsushige, Kazumi ^a  

^a KYOTO UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY POLICY   (Japan)

Author keywords

Ambipolar transport; Electron trap; Gate buffer layer; Organic thin film transistor; Pentacene

Indexed keywords

AMBIPOLAR TRANSPORT; ELECTRON ACCUMULATION; FIELD-EFFECT MOBILITIES; GATE INSULATOR; GATE VOLTAGES; GOLD ELECTRODES; GOLD SOURCE; HIGH WORK FUNCTION; N-CHANNEL; ORGANIC THIN FILM TRANSISTORS; PENTACENE THIN-FILM TRANSISTORS; PENTACENES; PMMA FILMS; ULTRA-THIN; ULTRATHIN POLYMERS;

BUFFER LAYERS; ELECTRON MOBILITY; ELECTRON TRAPS; ELECTRONS; ESTERS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 72749114036     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2009.10.009     Document Type: Article

References (26)

1. Zaumseil J., and Sirringhaus H. Chem. Rev. 107 (2007) 1296
2. Anthopoulos T.D., Anyfantis G.C., Papavassiliou G.C., and de Leeuw D.M. Appl. Phys. Lett. 90 (2007) 122105
3. Jones B.A., Facchetti A., Wasielewski M.R., and Marks T.J. J. Am. Chem. Soc. 129 (2007) 15259
4. Tada H., Touda H., Takada M., and Matsushige K. Appl. Phys. Lett. 76 (2000) 873
5. Ahles M., Schmechel R., and von Seggern H. Appl. Phys. Lett. 85 (2004) 4499
6. Yasuda T., Goto T., Fujita K., and Tsutsui T. Appl. Phys. Lett. 85 (2004) 2098
7. Guo T.-F., Tsai Z.-J., Chen S.-Y., Wen T.-C., and Chung C.-T. J. Appl. Phys. 101 (2007) 124505
8. Singh Th.B., Meghdadi F., Günes S., Marjanovic N., Horowitz G., Lang P., Bauer S., and Sariciftci N.S. Adv. Mater. 17 (2005) 2315
9. Chua L.-L., Zaumseil J., Chang J.-F., Ou E.C.-W., Ho P.K.-H., Sirringhaus H., and Friend R.H. Nature 434 (2005) 194
10. Yang C.-Y., Cheng S.-S., Ou C.-W., Chuang Y.-C., Wu M.-C., Dhananjay, and Chu C.-W. J. Appl. Phys. 103 (2008) 094519
11. Sakanoue T., Yahiro M., Adachi C., Takimiya K., and Toshimitsu A. J. Appl. Phys. 103 (2008) 094509
12. Takahashi T., Takenobu T., Takeya J., and Iwasa Y. Appl. Phys. Lett. 88 (2006) 033505
13. Takebayashi S., Abe S., Saiki K., and Ueno K. Appl. Phys. Lett. 94 (2009) 083305
14. Cornil J., Brédas J.-L., Zaumseil J., and Sirringhaus H. Adv. Mater. 19 (2007) 1791
15. Tanida S., Noda K., Kawabata H., and Matsushige K. Polym. Adv. Technol. (2009) 10.1002/pat.1474
16. Tanida S., Noda K., Kawabata H., and Matsushige K. Thin Solid Films 518 (2009) 571
17. Nollau A., Pffeifer M., Fritz T., and Leo K. J. Appl. Phys. 87 (2000) 4340
18. Ohta N., Koizumi M., Nishimura Y., Yamazaki I., Tanimoto Y., Hatano Y., Yamamoto M., and Kono H. J. Phys. Chem. 100 (1996) 19295
19. Parratt L.G. Phys. Rev. 95 (1954) 359
20. Yoshida M., Uemura S., Kodzsa T., Kamata T., Matsuzawa M., and Kawai T. Synth. Met. 137 (2003) 967
21. Gundlach D.J., Jackson T.N., Schlom D.G., and Nelson S.F. Appl. Phys. Lett. 74 (1999) 3302
22. Ishii H., Sugiyama K., Ito E., and Seki K. Adv. Mater. 11 (1999) 605
23. Kaji T., Entani S., Ikeda S., and Saiki K. Adv. Mater. 20 (2008) 2084
24. Vissenberg M.C.J.M., and Matters M. Phys. Rev. B 57 (1998) 12964
25. Horowitz G., Hajlaoui R., Fichou D., and El Kassmi A. J. Appl. Phys. 85 (1999) 3202
26. Brown A.R., Jarrett C.P., de Leeuw D.M., and Matters M. Synth. Met. 88 (1997) 37