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Volumn 20, Issue 16, 2008, Pages 3143-3148

Chemical control of local doping in organic thin-film transistors: From depletion to enhancement

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTIONS; CHEMICAL SENSORS; FOCUSED ION BEAMS; GOLD DEPOSITS; ION BEAM ASSISTED DEPOSITION; PLATINUM; SEMICONDUCTING ORGANIC COMPOUNDS; SENSOR NETWORKS; THIN FILM DEVICES; TRANSISTORS; WATER POLLUTION;

EID: 54949094370     PISSN: 09359648     EISSN: None     Source Type: Journal    
DOI: 10.1002/adma.200800058     Document Type: Article
Times cited : (59)

References (44)
  • 25
    • 54949100521 scopus 로고    scopus 로고
    • 3.
    • 3.
  • 33
    • 54949126505 scopus 로고    scopus 로고
    • In this context it should be mentioned that whether or not the H atom remains chemically bound to the rr-P3HT or leaves the device after chemical reduction by an electron from the leakage current as gaseous H2, should have no dramatic effect on the device characteristics. The chemical reactions with basic, gaseous reagents discussed below, however, support the situation depicted in Scheme 1
    • 2, should have no dramatic effect on the device characteristics. The chemical reactions with basic, gaseous reagents discussed below, however, support the situation depicted in Scheme 1.
  • 38
    • 54949084370 scopus 로고    scopus 로고
    • 2 surface at a high concentration due to the plasma etching and water dipping step (as can be inferred, e.g, from the contact angle data in the Supporting Information).
    • 2 surface at a high concentration due to the plasma etching and water dipping step (as can be inferred, e.g, from the contact angle data in the Supporting Information).
  • 39
    • 0009179340 scopus 로고    scopus 로고
    • a ≈5 (from ref. 2).
    • a ≈5 (from ref. 2).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.