Enhanced P3HT OTFT transport performance using double gate modulation scheme

IEEE Electron Device Letters

Volumn 30, Issue 6, 2009, Pages 629-631

  Lo, Po Yuan ^a,b   Li, Pei Wen ^b   Pei, Zing Way ^c   Hou, Jack ^a   Chan, Yi Jen ^a,b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

Double gate; Operation mode; Organic thin film transistor (OTFT)

Indexed keywords

DEVICE STRUCTURES; DOUBLE GATE; ELECTRICAL PROPERTY; ELECTROSTATIC POTENTIAL MODEL; INKJET PRINTING PROCESS; MODULATION SCHEMES; OPERATION MODE; ORGANIC THIN FILM TRANSISTORS; ORGANIC THIN-FILM TRANSISTOR (OTFT); PARASITIC LEAKAGES; SIGNIFICANT IMPACTS; SUBTHRESHOLD SLOPE; TRANSPORT PERFORMANCE;

CHEMICAL SENSORS; ELECTRIC PROPERTIES; GALERKIN METHODS; MODULATION; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIOPHENE;

THIN FILM TRANSISTORS;

EID: 67649378824     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2018707     Document Type: Article

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