Fabrication techniques and material properties of dielectric MgO thin films-A status review

CIRP Journal of Manufacturing Science and Technology

Volumn 2, Issue 2, 2010, Pages 92-113

  Raj, A Moses Ezhil ^a   Jayachandran, M ^b   Sanjeeviraja, C ^c  

^a SCOTT CHRISTIAN COLLEGE AUTONOMOUS   (India)

^b CENTRAL ELECTROCHEMICAL RESEARCH INSTITUTE   (India)

^c ALAGAPPA UNIVERSITY   (India)

Author keywords

Dielectric thin films

Indexed keywords

ALTERNATING CURRENT PLASMA DISPLAY PANELS; CATALYTIC AGENTS; COMPOSITIONAL VARIATION; DIELECTRIC THIN FILMS; DISCHARGE CHARACTERISTICS; ELECTRONIC COMPONENT; ENERGY BANDGAPS; FABRICATION TECHNIQUE; FOREIGN MATTER; HIGH QUALITY; INORGANIC DIELECTRICS; INTRINSIC ELECTRONICS; LASER MATERIALS; MATERIAL PROPERTY; MGO SURFACES; MGO THIN FILMS; NEW MATERIAL; OPTICAL CHARACTERISTICS; OPTICAL CHARACTERIZATION; POISSON'S RATIO; PROTECTING LAYER; RADIATION RESISTANT; REFRACTORY OXIDES; RESEARCH EFFORTS; SECONDARY ELECTRON EMISSION COEFFICIENTS; SPECTRAL REGION; SURFACE PHYSICS; TECHNOLOGICAL APPLICATIONS; VACUUM ULTRAVIOLETS; WIDE BAND GAP; WIDE GAP; WIDE-GAP OXIDES;

ALKALI HALIDES; CHARACTERIZATION; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ENERGY GAP; FABRICATION; INCLUSIONS; INTELLIGENT AGENTS; LIGHTING; OPTICAL PROPERTIES; PLASMA DISPLAY DEVICES; POISSON RATIO; RADIATION DETECTORS; RESEARCH; SECONDARY EMISSION; SENSORS; SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACES; THIN FILMS; VACUUM APPLICATIONS;

DIELECTRIC MATERIALS;

EID: 77950630493     PISSN: 17555817     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cirpj.2010.02.003     Document Type: Review

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